features complementary to kta1273 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 1ma , i e =0 30 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 1ma, i c =0 5 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe v ce = 2 v, i c = 500 ma 100 320 collector-emitter saturation voltage v ce (sat) i c = 1.5a, i b = 30 ma 2.0 v base-emitter voltage v be v ce =2v, i c = 500ma 1.0 v transition frequency f t v ce = 2 v, i c = 500ma 120 mhz collector output capacitance c ob v cb =10v, i e =0,f=1mh z 13 pf classification of h fe rank o y range 100-200 160-320 1 2 3 to-92l 1. emitter 2. collector 3. base KTC3205 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
KTC3205 typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu
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